A pn step junction is fabricated in silicon with a donor concentration of2×10 15 cm −3 on one side on the junction and an acceptor concentration of 5×10 15cm −3 on the other. Find xp,xn, and the depletion width W at 300 K. (The permittivity of silicon is 11.68ϵ 0, where ϵ0 is the permittivity of vacuum, ϵ0 =8.854×10 −12 F/m.) Select 3 correct answer(s) x p =0.997μmx p =0.550μmx p =0.220μmx p =0.440μmx n =0.498μmx n =0.220μmx n =0.550μmx n =0.770μmW=1.50μmW=0.770μmW=1.20μmW=1.11μm