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1. Consider a Si PN junction with doping concentrations of Na = 5 x 10¹7/cm³ and Nd = 10¹6/cm³. (a) What is the electron concentration at the P boundary of depletion layer (n (xp)) at 300 K under a forward bias of 0.7 V? (b) Calculate the diode current under the forward bias of 0.7 V. Assume the reverse saturation current (lo) is 2.2 × 10-11 A. (c) A solar cell is made from this junction with a very thin P side, and holes are generated in N side with a generation rate of 1.4 x 1021 /s-cm³ under solar light. What is the solar cell current under the forward bias (0.7 V) and solar light. Assume the cell area is 6.2 cm² and hole diffusion length is 200 μm.​

1 Consider a Si PN junction with doping concentrations of Na 5 x 107cm and Nd 106cm a What is the electron concentration at the P boundary of depletion layer n class=

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